Das Projekt "Vakuum-UV-Photo-CVD fuer amorphe Silicium-Kohlenstoff-Legierungen" wird vom Umweltbundesamt gefördert und von Universität Stuttgart, Institut für Kraftfahrwesen und Fahrzeugmotoren durchgeführt. Objective: For a soft deposition of amorphous sic alloys a specific photo cvd process is proposed, which can be expected t improve the P +/I-interface in a-sih-p-I-n solar cells. General Information: A vaccum-uv-photo-cvd reactor for direct decomposition of sih4, si2h6, b2h6, and of hydrocarbons (ch4, c4h10) has been operated with a gaseous transmission filter between deposition chamber and d2-lamp. Growth rates mainly depend on total gas pressure, window-to-substrate distance, and spatial gas flow distribution in the reactor. Undoped a-si:h and a-sic:h films show fermi level position near midgap and photo conductivities exceeding the data for glow discharge deposited films. A shift of fermi level position towards the valence band has been achieved with b2h6 doping. For optical band gap eg = 2.24 ev activation energy determined from temperature dependent dark conductivity decreases from higher then 1 ev (intrinsic layers) to 0.42 ev for heavily doped films. C-incorporation is more effective with c4h10 compared to ch4 because of higher absorption cross section. Since photo cvd growth rates with our commercial d2-lamp are about 2 orders of magnitude lower than glow discharge deposition rates, a novel large area vuv lamp based upon dielectric barrier discharges has been built. Achievements: There is strong evidence that the addition of diborane to the silane gas phase for p-type doping of amorphous silicon pin structures causes dramatic changes in plasma parameters compared with pure silane discharges or mixtures of silane and phosphine. Considerable changes are produced in the properties of boron doped films, compared with undoped or n-doped ones, including a decrease in hydrogen content, gap narrowing, grainy structures and a decrease in dopability. In addition, interface states at the pi interface, which reduce the current of minority carriers in solar cells, are also produced.